| PART |
Description |
Maker |
| M36DR432C M36DR432CA10ZA6T M36DR432CA85ZA6T M36DR4 |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| M29DW324DT M29DW324DB 8730 M29DW324DT90ZE6T M29DW3 |
32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory
From old datasheet system
32 MBIT (4MB X8 OR 2MB X16, DUAL BANK 16:16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
|
STMICROELECTRONICS[STMicroelectronics]
|
| M59MR032-GCT M59MR032D120ZC6T M59MR032C100GC6T M59 |
32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
|
意法半导
|
| M29DW324DT |
32 MBIT (4MB X8 OR 2MB X16, DUAL BANK, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
|
ST Microelectronics
|
| M29DW323DB |
32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory
|
Numonyx B.V
|
| M29DW323DB70ZA6 M29DW323DT M29DW323DT70N1E M29DW32 |
CAP 100PF 50V 20% Z5U SMD-0805 TR-7 PLATED-NI/SN
Low-Noise Precision Operational Amplifier 8-SOIC 32兆位4Mb的x8或功能的2Mb x16插槽，双4分，启动V电源快闪记忆
High-Speed, Low-Power, Precision Quad Operational Amplifier 20-LCCC -55 to 125 32兆位4Mb的x8或功能的2Mb x16插槽，双4分，启动V电源快闪记忆
32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽，双24分，启动V电源快闪记忆
32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽，双4分，启动V电源快闪记忆
High-Speed, Low-Power, Precision Quad Operational Amplifier 14-CDIP -55 to 125 32兆位4Mb的x8或功能的2Mb x16插槽，双4分，启动V电源快闪记忆
Excalibur High-Speed Low-Power Precision Quad Operational Amplifier 14-PDIP
32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 8:24 / Boot Block 3V Supply Flash Memory
|
STMicroelectronics N.V.
意法半导
ST Microelectronics
SGS Thomson Microelectronics
|
| SST36VF1601C-70-4C-B3KE SST36VF1601C-70-4C-EKE SST |
16 Mbit (x8/x16) Dual-Bank Flash Memory
16 Mbit (x8/x16) Concurrent SuperFlash
|
SST[Silicon Storage Technology, Inc]
|
| M29KDCL3-32T M29KW032E110N1T M29KW032E110N3T M29KW |
32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlashMemory 32兆位Mb x16插槽，统一V电源LightFlash⑩记
32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash?/a> Memory
32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash Memory
|
STMicroelectronics N.V.
意法半导
|
| 7782 M58CR032C100ZB6T M58CR032D100ZB6T M58CR032C85 |
32 Mbit (2Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory
32 Mbit 2Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
32 Mbit 2Mb x 16 / Dual Bank / Burst 1.8V Supply Flash Memory
32 Mbit (2Mb x 16 / Dual Bank / Burst ) 1.8V Supply Flash Memory
|
意法半导
ST Microelectronics
|
| M36DR432BD85ZA6T M36DR432AD12ZA6T M36DR432AD85ZA6T |
PS MEDICAL SWITCHING 5V 8A 32兆位Mb x16插槽，双行，页闪存和4兆位56Kb x16的SRAM，多个存储产
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product 32兆位Mb x16插槽，双行，页闪存和4兆位56Kb x16的SRAM，多个存储产
PS MEDICAL SWITCHING 24V 1.7A 32兆位Mb x16插槽，双行，页闪存和4兆位56Kb x16的SRAM，多个存储产
|
意法半导
STMicroelectronics N.V.
|
| M36W0R6030T0ZAQ M36W0R6030B0ZAQ M36W0R6030B0 M36W0 |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
|
http://
STMicroelectronics
|
| M36W832TE70ZA1T M36W832TE85ZA1T M36W832TE-ZAT M36W |
SPECIALTY MEMORY CIRCUIT, PBGA66
32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
|
SGS Thomson Microelectronics
NUMONYX
意法半导
ST Microelectronics
|
